東芝記憶體提供8種THGBMHG8C4LBAAR車用32G eMMC IBIS models，支持客戶在開發初期用以做訊號完整性(Signal Integrity, SI)的評估與驗證。
客戶需使用Synopsys HSpice,Agilent ADS ... etc.類似的模擬軟體導入東芝THGBMHG8C4LBAAR IBIS模型，從Host經過via對接trace再接到東芝THGBMHG8C4LBAAR IBIS模型完成整個訊號的路徑設定後，調整各種影響分析的參數進而達成客戶想要的Design of Experiments (DOE)，THGBMHG8C4LBAAR車用32G eMMC 8種 IBIS models敘述如下:
thgbmhg8c4lbaar_hs200ddr52_50_18.ibs --> VCCQ = 1.8V, Speed: DDR52/HS200 mode, Drving type = 0x0 (50Ohm)
thgbmhg8c4lbaar_hs400hs200ddr52_33_18.ibs --> VCCQ = 1.8V, Speed: HS400 mode, Drving type = 0x1 (33Ohm)
thgbmhg8c4lbaar_hs400hs200ddr52_33_18.ibs --> VCCQ = 1.8V, Speed: DDR52/HS200 mode, Drving type = 0x2 (66Ohm)
客戶需使用Synopsys HSpice,Agilent ADS ... etc.類似的模擬軟體導入東芝THGBMHG8C4LBAAR IBIS模型，從Host經過via對接trace再接到東芝THGBMHG8C4LBAAR IBIS模型完成整個訊號的路徑設定後，調整各種影響分析的參數進而達成客戶想要的Design of Experiments (DOE)，THGBMHG8C4LBAAR車用32G eMMC 8種 IBIS models敘述如下:
thgbmhg8c4lbaar_hs200ddr52_50_18.ibs --> VCCQ = 1.8V, Speed: DDR52/HS200 mode, Drving type = 0x0 (50Ohm)
thgbmhg8c4lbaar_hs400hs200ddr52_33_18.ibs --> VCCQ = 1.8V, Speed: HS400 mode, Drving type = 0x1 (33Ohm)
thgbmhg8c4lbaar_hs400hs200ddr52_33_18.ibs --> VCCQ = 1.8V, Speed: DDR52/HS200 mode, Drving type = 0x2 (66Ohm)
thgbmhg8c4lbaar_hs200ddr52_100_18.ibs --> VCCQ = 1.8V, Speed: HS400 mode, Drving type = 0x3 (100Ohm)
thgbmhg8c4lbaar_hs400_40_18.ibs --> VCCQ = 1.8V, Speed: HS400 mode, Drving type = 0x4 (40Ohm)
thgbmhg8c4lbaar_hs200ddr52_50_33.ibs --> VCCQ = 3.3V, Speed: DDR52/HS200 mode, Drving type = 0x0 (50Ohm)
thgbmhg8c4lbaar_hs200ddr52_66_33.ibs --> VCCQ = 3.3V, Speed: DDR52/HS200 mode, Drving type = 0x2 (66Ohm)
thgbmhg8c4lbaar_hs200ddr52_100_33.ibs --> VCCQ = 1.8V, Speed: DDR52/HS200 mode, Drving type = 0x3 (100Ohm)